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RF3377

GENERAL PURPOSE AMPLIFIER

RFMD

RF Micro Devices

RF3377

GENERAL PURPOSE AMPLIFIER

RFMD

RF Micro Devices

RF3377

GENERAL PURPOSE AMPLIFIER

RFMD

RF Micro Devices

RF3377_1

GENERAL PURPOSE AMPLIFIER

RFMD

RF Micro Devices

RF3377PCK-410

GENERAL PURPOSE AMPLIFIER

RFMD

RF Micro Devices

3377

Heyco짰NylonCableClamps

ETCList of Unclassifed Manufacturers

未分类制造商

AH3377

HIGHVOLTAGELOWSENSITIVITYHALLEFFECTUNIPOLARSWITCH

DIODESDiodes Incorporated

达尔科技

AH3377

HIGHVOLTAGELOWSENSITIVITYHALLEFFECTUNIPOLARSWITCH

DIODESDiodes Incorporated

达尔科技

AH3377-P-A

HIGHVOLTAGELOWSENSITIVITYHALLEFFECTUNIPOLARSWITCH

DIODESDiodes Incorporated

达尔科技

AH3377-P-A

HIGHVOLTAGELOWSENSITIVITYHALLEFFECTUNIPOLARSWITCH

DIODESDiodes Incorporated

达尔科技

AH3377-P-B

HIGHVOLTAGELOWSENSITIVITYHALLEFFECTUNIPOLARSWITCH

DIODESDiodes Incorporated

达尔科技

AH3377-P-B

HIGHVOLTAGELOWSENSITIVITYHALLEFFECTUNIPOLARSWITCH

DIODESDiodes Incorporated

达尔科技

C3377

2SC2673

FTR•FTL Lowprofileflat-packageforlimitedspeceapplications. Tapetypecanbeusedonautomatedline.Bulktypeisalsoavailable.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

CHU3377

W-bandMultifunction:Multiplier/MPA

UMSUnited Monolithic Semiconductors

United Monolithic Semiconductors

CHU3377

W-bandMultifunction:Multiplier/MPA

UMSUnited Monolithic Semiconductors

United Monolithic Semiconductors

INN3377C

DigitallyControllableOff-LineCV/CCQRFlybackSwitcherICwithIntegratedHigh-VoltageSwitch,SynchronousRectificationandFluxLinkFeedback

DigitallyControlledviaI2CInterface •Dynamicadjustmentofpowersupplyvoltageandcurrent •Telemetryforpowersupplystatusandfaultmonitoring •Comprehensivesetofconfigurableprotectionfeatures •PowiGaN™technology–upto100Wwithoutheatsinks(INN3378C, INN3379CandINN337

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

K3377

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

K3377

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3377isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •LowOn-stateResistance RDS(on)1=44mΩMAX.(VGS=10V,ID=10A) RDS(on)2=78mΩMAX.(VGS=4.0V,ID=10A) •LowCiss:Ciss=760pFTY

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

K3377

MOSFieldEffectTransistor

Features •Lowon-resistance RDS(on)1=44mMAX.(VGS=10V,ID=10A) RDS(on)2=78mMAX.(VGS=4.0V,ID=10A) •LowCiss:Ciss=760pFTYP. •Built-ingateprotectiondiode

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

K3377

Lowon-resistance

TYSEMITaiwan TY Semiconductor Co. , Ltd.

台湾TY半导体台湾TY半导体有限公司

详细参数

  • 型号:

    RF3377

  • 制造商:

    RFMD

  • 功能描述:

    AMP RF GAIN BCK DC-6GHZ SOT89

  • 制造商:

    RF Micro Devices Inc

  • 功能描述:

    AMP, RF, GAIN BCK, DC-6GHZ, SOT89

供应商型号品牌批号封装库存备注价格
MINI
2018+
SMD
3600
MINI专营品牌全新原装正品假一赔十
询价
Qorvo
19+
标准封装
2500
询价
2017+
SMD
1585
只做原装正品假一赔十!
询价
RFMD
2022+
SOT89
5000
只做原装公司现货
询价
RFMICRO
2021+
N/A
6800
只有原装正品
询价
23+
N/A
45880
正品授权货源可靠
询价
RFMD
22+
12500
原装正品现货
询价
QORVO
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
RFMD
23+
N/A
7560
原厂原装
询价
RFMD
23+
SOT89
50000
全新原装正品现货,支持订货
询价
更多RF3377供应商 更新时间2024-5-1 9:26:00