8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internally matched for ease of use • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the European direct

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STMICROELECTRONICS

意法半导体

8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor

The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FETs, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz. It can be used in class AB, B or C for all typical modulation formats. • High efficiency and linear gain operations \n• Integrated ESD protection \n• Internally matched for ease of use \n• Large positive and negative gate-source voltage range for improved class C operation \n• Excellent thermal stability, low HCI drift \n• In compliance with the european directive 2002;

ST

意法半导体

RFID 应答器

TI

德州仪器

上传：深圳市诺美思科技有限公司

sop8

RFMD

威讯联合

上传：深圳市莱克讯科技有限公司

sop8

RFMD

威讯联合

上传：深圳市昊创电子有限公司