40 W, 28 V, 2.7 to 3.6 GHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internally matched for ease of use • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the european direct

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STMICROELECTRONICS

意法半导体

40 W, 28 V, 2.7 to 3.6 GHz RF power LDMOS transistor

The RF2L36040CF2 is a 40 W 28 V common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for cellular and S-band radar applications at frequencies from 2.7 to 3.6 GHz. It can be used in class A/AB and C for all typical modulation formats. • High efficiency and linear gain operations \n• Integrated ESD protection – HBM class 2 \n• Internally matched for ease of use \n• Large positive and negative gate/source voltage range for improved class C operation \n• Excellent thermal stability, low HCI drift \n• In compliance with the European ;

ST

意法半导体

QFN

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)

QFN

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)