15 W, 28 V, 0.7 to 2.7 GHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internally input matched for ease of use • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the European

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STMICROELECTRONICS

意法半导体

15 W, 28 V, 0.7 to 2.7 GHz RF power LDMOS transistor

The RF2L27015CG2 is a 15 W, 28 V, internally matched LDMOS transistor, designed for Telecom, wideband communications and ISM applications in the frequency range from 0.7 to 2.7 GHz. It can be used in class AB, B or C for all typical modulation formats. • High efficiency and linear gain operations \n• Integrated ESD protection \n• Internally input matched for ease of use \n• Large positive and negative gate-source voltage range for improved class C operation \n• Excellent thermal stability, low HCI drift \n• In compliance with the european directiv;

ST

意法半导体

QFN

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)

QFN

RFMD

威讯联合

上传：深圳市兴联达电子有限公司(原兴达电子)