180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor

The RF2L16180CB4 is a 180 W, internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper externa • High efficiency and linear gain operations \n• Integrated ESD protection \n• Internally matched for ease of use \n• Optimized for Doherty applications \n• Large positive and negative gate/source voltage range for improved class C operation \n• In compliance with the European Directive 2002/95/EC;

ST

意法半导体

180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor

Features • High efficiency and linear gain operations • Integrated ESD protection • Internally matched for ease of use • Optimized for Doherty applications • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the European Directive 2002

文件：2.49327 Mbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Package：B4E；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：180 W, 28 V, 1.3 TO 1.6 GHZ RF P

STMICROELECTRONICS

意法半导体

RFID 应答器

TI

德州仪器

上传：深圳市诺美思科技有限公司

sop8

RFMD

威讯联合

上传：深圳市莱克讯科技有限公司