RF2323

3V GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2323isageneralpurpose,low-costsiliconamplifierdesignedforoperationfroma3Vsupply.Thecircuitconfigurationwithresistivefeedbackallowsforbroadbandcascadableamplification.Capacitivecompensationextendsthebandwidthoftheamplifierandinputstage

RF2323

3V GENERAL PURPOSE AMPLIFIER;

RF2323PCBA

3V GENERAL PURPOSE AMPLIFIER

ProductDescription TheRF2323isageneralpurpose,low-costsiliconamplifierdesignedforoperationfroma3Vsupply.Thecircuitconfigurationwithresistivefeedbackallowsforbroadbandcascadableamplification.Capacitivecompensationextendsthebandwidthoftheamplifierandinputstage

RN2323A

SiliconPNPEpitaxialType(PCTProcess)Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications

SFS2323

SILICONCONTROLLEDRECTIFIER

SI2323

P-ChannelMOSFET

Features VDS (V) =-30V ID=-4.2A(VGS=-10V) RDS(ON)

SI2323

P-ChannelMOSFET

Features ●VDS(V)=-30V ●ID=-4.2A(VGS=-10V) ●RDS(ON)

SI2323CDS

20VP-ChannelEnhancementModeMOSFET

Application Load/PowerSwitching InterfacingSwitching LogicLevelShift

SI2323CDS

-20VP-ChannelEnhancementModeMOSFET

Description TheSi2323CDSusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=-20VID=-4.9A RDS(ON)

SI2323CDS

P-Channel20V(D-S)MOSFET