首页 >RF2311其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess) Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •ComplementarytoRN1310,RN1311 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
1WattSMDMiniatureIsolatedSingleOutput | RECOM Recom International Power | RECOM | ||
1WattSMDMiniatureIsolatedSingleOutput | RECOM Recom International Power | RECOM | ||
P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
P-Channel1.8-V(G-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SinglechannelLEDconstantcurrentdrivecontrolchip | LINKAGELinkage Goston Electronics Co., LTD 钲铭科电子深圳市钲铭科电子有限公司 | LINKAGE | ||
P-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中集成电路大中集成电路股份有限公司 | SINOPWER | ||
P-Channel30V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中集成电路大中集成电路股份有限公司 | SINOPWER | ||
P-Channel60-V(D-S)MOSFET FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) •SinktoLeadCreepageDistance=4.8mm •P-Channel •175°COperatingTemperature •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
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