GENERAL PURPOSE AMPLIFIER

Product Description The RF2043 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

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RFMD

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GENERAL PURPOSE AMPLIFIER

Product Description The RF2043 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：68.31 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2044 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：97.5 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2045 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：67.48 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2045 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：67.48 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2046 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：97.4 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2046 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：97.4 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2047 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：68.32 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2047 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：68.32 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2048 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：68.08 Kbytes 页数：6 Pages

RFMD

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