TRADITIONAL PROTECTION FOR CIRCUITS WITH LESS THAN 10,000A

FEATURES/BENEFITS : • Knurled bushings for ease of disassembly • Rugged construction for maximum service life • Precision die-cut renewal links renew quickly and give repeatable performance

文件：106.87 Kbytes 页数：2 Pages

MERSEN

美尔森

丝印：75；Package：SOD-128；Super Fast Recovery Diode

Applications General rectification Features 1) Low forward voltage 2) Low switching loss 3) High current overload capacity

文件：1.2251 Mbytes 页数：7 Pages

ROHM

罗姆

Super Fast Recovery Diode

●Features Small power mold type Low forward voltage Low switching loss ●Application General rectification

文件：2.16659 Mbytes 页数：8 Pages

ROHM

罗姆

GENERAL PURPOSE AMPLIFIER

Product Description The RF2043 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：68.31 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2043 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：68.31 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2044 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：97.5 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2045 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：67.48 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2045 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：67.48 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2046 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：97.4 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2046 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：97.4 Kbytes 页数：6 Pages

RFMD

威讯联合