首页 >RF1S60P03SM-VB>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
60A,30V,AvalancheRated,P-ChannelEnhancement-ModePowerMOSFETs Features •60A,30V •rDS(ON)=0.027Ω •TemperatureCompensatingPSPICE®Model •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMountComponentstoPCBoards” | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
60A,30V,AvalancheRated,P-ChannelEnhancement-ModePowerMOSFETs Features •60A,30V •rDS(ON)=0.027Ω •TemperatureCompensatingPSPICE®Model •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMountComponentstoPCBoards” | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
60A,30V,0.027Ohm,P-ChannelPowerMOSFETs TheseP-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg | Intersil Intersil Corporation | Intersil |
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