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型号	下载订购	功能描述	制造商上传企业	LOGO
REG113EA-3.3SLASH2K5	文件：667.83 Kbytes Page：22 Pages	DMOS 400mA Low-Dropout Regulator FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG 文件：667.83 Kbytes 页数：22 Pages	TI 德州仪器	TI
REG113EA-3.3SLASH2K5.B	文件：667.83 Kbytes Page：22 Pages	DMOS 400mA Low-Dropout Regulator FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG 文件：667.83 Kbytes 页数：22 Pages	TI 德州仪器	TI
REG113EA-3SLASH2K5	文件：667.83 Kbytes Page：22 Pages	丝印：R13D；Package：VSSOP；DMOS 400mA Low-Dropout Regulator FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG 文件：667.83 Kbytes 页数：22 Pages	TI 德州仪器	TI
REG113EA-3SLASH2K5.B	文件：667.83 Kbytes Page：22 Pages	丝印：R13D；Package：VSSOP；DMOS 400mA Low-Dropout Regulator FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG 文件：667.83 Kbytes 页数：22 Pages	TI 德州仪器	TI
REG113EA-5SLASH250	文件：667.83 Kbytes Page：22 Pages	丝印：R13B；Package：VSSOP；DMOS 400mA Low-Dropout Regulator FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG 文件：667.83 Kbytes 页数：22 Pages	TI 德州仪器	TI
REG113EA-5SLASH250.B	文件：667.83 Kbytes Page：22 Pages	丝印：R13B；Package：VSSOP；DMOS 400mA Low-Dropout Regulator FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG 文件：667.83 Kbytes 页数：22 Pages	TI 德州仪器	TI
REG113EA-5SLASH2K5	文件：667.83 Kbytes Page：22 Pages	丝印：R13B；Package：VSSOP；DMOS 400mA Low-Dropout Regulator FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG 文件：667.83 Kbytes 页数：22 Pages	TI 德州仪器	TI
REG113EA-5SLASH2K5.B	文件：667.83 Kbytes Page：22 Pages	丝印：R13B；Package：VSSOP；DMOS 400mA Low-Dropout Regulator FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG 文件：667.83 Kbytes 页数：22 Pages	TI 德州仪器	TI
REG113NA-2.5SLASH250	文件：667.83 Kbytes Page：22 Pages	DMOS 400mA Low-Dropout Regulator FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG 文件：667.83 Kbytes 页数：22 Pages	TI 德州仪器	TI
REG113NA-2.5SLASH250.B	文件：667.83 Kbytes Page：22 Pages	DMOS 400mA Low-Dropout Regulator FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG 文件：667.83 Kbytes 页数：22 Pages	TI 德州仪器	TI

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技术参数

Iout (Max) (A)：
0.4
Vin (Max) (V)：
10
Vin (Min) (V)：
2.7
Vout (Max) (V)：
5
Vout (Min) (V)：
2.5
Fixed output options (V)：
2.5
Noise (uVrms)：
28
Iq (Typ) (mA)：
0.4
Thermal resistance θJA (°C/W)：
160
Rating：
Catalog
Load capacitance (Min) (µF)：
0
Regulated outputs (#)：
1
Features：
Enable
Accuracy (%)：
3
PSRR @ 100 KHz (dB)：
28
Dropout voltage (Vdo) (Typ) (mV)：
250
Operating temperature range (C)：
-40 to 85

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市恒科翔业电子有限公司	REG113	TI德州仪器	22+		24000	原装正品现货,实单可谈,量大价优	询价
深圳市中亿伟业电子有限公司	REG113	TI/德州	2018+	HTSSOP	32500	SOIC	询价
深圳市一线半导体有限公司	REG113NA-3.3		24+		5000	公司存货	询价
深圳市毅创腾电子科技有限公司	REG113NA-5/250	TI	23+	SOT23	5500	现货,全新原装	询价
深圳市星佑电子有限公司	REG113NA-3.3	BB	05/06+		52	全新原装100真实现货供应	询价
深圳市福安瓯科技有限公司	REG113NA-3.3	TI	25+	SOT23	5000	热卖	询价
谛辉(北京/上海/青岛 )电子科技有限公司	REG113NA-3/250	TI	25+	标准封装	18000	原厂直接发货进口原装	询价
深圳市恒创达实业有限公司	REG113NA-3.3	TI	17+	5SOT23	6200	100%原装正品现货	询价
深圳市卓越微芯电子有限公司	REG113NA-2.5/250	TI	25+	SOT23-5	484	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市利加科技有限公司	REG113EA-5	BB	16+	MSOP8	8000	原装现货请来电咨询	询价

更多REG113供应商更新时间2025-12-1 8:01:00

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