丝印：REG101U50；Package：SOIC；DMOS 100mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0

文件：768.83 Kbytes 页数：25 Pages

TI

德州仪器

丝印：REG101U50；Package：SOIC；DMOS 100mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0

文件：768.83 Kbytes 页数：25 Pages

TI

德州仪器

丝印：REG101UA；Package：SOIC；DMOS 100mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0

文件：768.83 Kbytes 页数：25 Pages

TI

德州仪器

丝印：REG101UA；Package：SOIC；DMOS 100mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0

文件：768.83 Kbytes 页数：25 Pages

TI

德州仪器

丝印：REG101UA；Package：SOIC；DMOS 100mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0

文件：768.83 Kbytes 页数：25 Pages

TI

德州仪器

DMOS 100mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0

文件：768.83 Kbytes 页数：25 Pages

TI

德州仪器

丝印：REG103FA-2.5；Package：DDPAK；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

文件：1.00465 Mbytes 页数：28 Pages

TI

德州仪器

丝印：REG103FA-2.5；Package：DDPAK；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

文件：1.00465 Mbytes 页数：28 Pages

TI

德州仪器

丝印：REG103FA-2.5；Package：DDPAK；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

文件：1.00465 Mbytes 页数：28 Pages

TI

德州仪器

丝印：REG103FA-2.5；Package：DDPAK；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

文件：1.00465 Mbytes 页数：28 Pages

TI

德州仪器