REF30E and REF30, Low Current Voltage Reference in SOT-23-3

1 Features • Small industry standard footprint: SOT23-3 • High accuracy – REF30E: ±0.1% – REF30: ±0.2% • Excellent temperature drift performance: – REF30E: 20ppm/°C – REF30: 75ppm/°C • REF30E is drop-in replacement of REF30 • Low IQ (typical) – REF30E: 25μA – REF30: 42μA • High

文件：1.43051 Mbytes 页数：32 Pages

TI

德州仪器

50ppm/C Max, 50UA in SOT23-3 CMOS VOLTAGE REFERENCE

文件：412.22 Kbytes 页数：14 Pages

BURR-BROWN

丝印：R30F；Package：SOT-23；50ppm/C Max, 50UA in SOT23-3 CMOS VOLTAGE REFERENCE

文件：309.24 Kbytes 页数：13 Pages

TI

德州仪器

采用 3 引脚 SOT-23 封装的 3V、50ppm/°C、50µA 输入串联（带隙）电压基准

REF30xx 是采用微型 3 引脚 SOT-23 封装的精密、低功耗、低压降电压基准产品系列。REF30xx 提供出色的温漂和初始精度，具有 42µA（典型值）的静态电流。\n\n低功耗和相对较高的精度使得 REF30xx 非常适合环路供电式工业 应用 ，如压力和温度变送器 应用中，低功耗是一个关键问题。REF30xx 非常便于用在本安和防爆 应用 中，因为它无需负载电容器即可实现稳定。REF30xx 的额定工业温度范围为 –40°C 至 +125°C。\n\n在零负载条件下，REF30xx 由 1mV 输出电压范围的电源供电。工程师们可在便携式和电池供电类应用中充分发挥 REF30xx 系 • 微型封装：SOT-23-3\n• 低压降：1mV\n• 高输出电流：25mA\n• 高精度：0.2%\n• 低 IQ：42µA（典型值）\n• 出色的额定温漂性能： \n• 0°C 至 70°C 范围内为 50ppm/°C（最大值）\n• –40°C 至 +125°C 范围内为 75ppm/°C（最大值）;

TI

德州仪器

CMOS Voltage Reference, High Precision, Low Drift, 3.0 V

The REF30xx family of voltage references provides accurate voltage regulation with a maximum temperature drift of 50 ppm/°C.The REF30xx can source or sink up to 10 mA of load current. It is supplied in a space-saving SOT-23 package, and for most applications can forgo the use of an output bypass cap • High Accuracy: 0.2%\n• Accurate Output Voltage\n• Low Quiescent Current: 30 A max\n• Low Power Consumption\n• Maximum 50 ppm/C Temperature Drift over the Specified Range of -40C to +85C\n• Stable Output Voltage\n• Reference Voltages:1.25 V, 2.048 V, 2.5 V, 3.0 V, 3.3 V, 4.096 V\n• High Output ;

ONSEMI

安森美半导体

REF30E and REF30, Low Current Voltage Reference in SOT-23-3

1 Features • Small industry standard footprint: SOT23-3 • High accuracy – REF30E: ±0.1% – REF30: ±0.2% • Excellent temperature drift performance: – REF30E: 20ppm/°C – REF30: 75ppm/°C • REF30E is drop-in replacement of REF30 • Low IQ (typical) – REF30E: 25μA – REF30: 42μA • High

文件：1.43051 Mbytes 页数：32 Pages

TI

德州仪器

REF30E and REF30, Low Current Voltage Reference in SOT-23-3

1 Features • Small industry standard footprint: SOT23-3 • High accuracy – REF30E: ±0.1% – REF30: ±0.2% • Excellent temperature drift performance: – REF30E: 20ppm/°C – REF30: 75ppm/°C • REF30E is drop-in replacement of REF30 • Low IQ (typical) – REF30E: 25μA – REF30: 42μA • High

文件：1.43051 Mbytes 页数：32 Pages

TI

德州仪器

REF30E and REF30, Low Current Voltage Reference in SOT-23-3

1 Features • Small industry standard footprint: SOT23-3 • High accuracy – REF30E: ±0.1% – REF30: ±0.2% • Excellent temperature drift performance: – REF30E: 20ppm/°C – REF30: 75ppm/°C • REF30E is drop-in replacement of REF30 • Low IQ (typical) – REF30E: 25μA – REF30: 42μA • High

文件：1.43051 Mbytes 页数：32 Pages

TI

德州仪器

REF30E and REF30, Low Current Voltage Reference in SOT-23-3

1 Features • Small industry standard footprint: SOT23-3 • High accuracy – REF30E: ±0.1% – REF30: ±0.2% • Excellent temperature drift performance: – REF30E: 20ppm/°C – REF30: 75ppm/°C • REF30E is drop-in replacement of REF30 • Low IQ (typical) – REF30E: 25μA – REF30: 42μA • High

文件：1.43051 Mbytes 页数：32 Pages

TI

德州仪器

50ppm/C Max, 50UA in SOT23-3 CMOS VOLTAGE REFERENCE

文件：309.24 Kbytes 页数：13 Pages

TI

德州仪器