丝印：REPackage：SMB；400 Watt Peak Power Zener Transient Voltage Suppressors

400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMA

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ONSEMI

安森美半导体

丝印：REPackage：SMB；400 Watt Peak Power Zener Transient Voltage Suppressors

400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SM

文件：148.71 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：REPackage：SMB；400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional

400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMA

文件：131.6 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：REThe 1SMA5.0AT3G series is designed to protect voltage sensitive components from high voltage

Description The 1SMA5.0AT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The 1SMA5.0AT3G series is supplied in the Littelfuse exclus

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Littelfuse

力特

丝印：RESURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：692.73 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：REPackage：SOT-89；NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD

FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 ×

文件：218.19 Kbytes 页数：10 Pages

RENESAS

瑞萨

丝印：REPackage：SOT-89；NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @VCE= 10 V, IC= 7 mA, f = 1.0 GHz N

文件：77.51 Kbytes 页数：8 Pages

NEC

瑞萨

丝印：REPackage：SOT-89；NPN Silicon RF Transistor

Features ● Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz ● High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz

文件：54.51 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：REPackage：SOT-89；NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz

文件：575.86 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：REPackage：SOT-89；NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 10dB @ VCE=10V，IC=20mA，f=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10V，IC=7mA，f=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10V，IC=20mA，f=1GHz

文件：575.86 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司