零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
CustomerSpecification | ALPHAWIREAlpha Wire 阿尔法电线 | ALPHAWIRE | ||
CustomerSpecification Construction 1)Component11X1HOOKUP a)Conductor28(7/36)AWGSilverPlatedCopper0.015 b)Insulation0.010Wall,Nom.PTFE0.035+/-0.004 (1)Color(s) WHITE,BLACK,RED,GREEN,YELLOW,BLUE,BROWN ORANGE,GRAY,VIOLET,WHITE/BLACK,WHITE/BLUE WHITE/ORANGE,WHITE/VIOLET | ALPHAWIREAlpha Wire 阿尔法电线 | ALPHAWIRE | ||
IntroductiontoKnowlesPrecisionDevices Applications RFamplifier LCFiltersandNetworks BroadbandWirelessLAN MedicalDevices CordlessandCellularphones DR/CrystalOscillator Microstriplinefilters | KNOWLESKnowles Knowles | KNOWLES | ||
MOSFET:P-ChannelSiliconMOSFETSBD:SchottkyBarrierDiode MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypecontainingaP-ChannelMOSFET(MCH3312)andaSchottkyBarrierDiode(SB1003M3),facilitatinghigh-densitymounting. •[MOS] •LowON-resistance •Ultrahigh-speedswitching •4Vdrive •[SBD] | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
PowerMOSFET(Vdss=20V) Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
UltraLowOn-Resistance Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
UltraLowOn-Resistance Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
UltraLowOn-Resistance Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
UltraLowOn-Resistance Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
UltraLowOn-Resistance Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
CMOSINTEGRATEDCIRCUIT | SamsungSamsung Group 三星三星半导体 | Samsung |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RDA |
1736+ |
QFN |
8298 |
只做进口原装正品假一赔十! |
询价 | ||
RDA |
23+ |
QFN |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
RDA |
1801+ |
QFN |
5960 |
原装正品-现货-绝对有货-实单价可谈 |
询价 | ||
RDA |
20+ |
QFN |
19570 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
RDA |
2020+ |
QFN |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
RDA |
2048+ |
QFN |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
RDA |
2021+ |
QFN |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
RDA |
22+ |
QFN |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 | ||
RDA |
21+ |
QFN |
5000 |
全新原装现货 价格优势 |
询价 | ||
RDA |
23+ |
QFN |
8678 |
原厂原装 |
询价 |
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