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RD8.2E

500mWDHDZENERDIODEDO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

RD8.2E

SILICONZENERDIODES

EIC

EIC discrete Semiconductors

RD8.2E

500mWPLANARTYPESILICONZENERDIODES

TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES •Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. •TheE24seriesisemployedforthe

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

RD8.2EAB

400mWDHDZENERDIODEDO-34

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

RD8.2EB

500mWDHDZENERDIODEDO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

RD8.2ES

400mWDHDZENERDIODEDO-34

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

RD8.2ES

ZENERDIODES

EIC

EIC discrete Semiconductors

RD8.2F

ZENERDIODES1WDO-41GLASSSEALEDPACKAGE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

RD8.2F

ZENERDIODES

EIC

EIC discrete Semiconductors

RD8.2FM

ZENERDIODES

EIC

EIC discrete Semiconductors

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