Silicon MOSFET Power Transistor 900MHz,45W

DESCRIPTION RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. FEATURES • High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz • High Efficiency: 50typ. APPLICATION For output stage of high power amplifiers in 80

文件：321.53 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

RoHS Compliance, Silicon MOSFET Power Transistor 900MHz,45W

文件：381.66 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

High Frequency Devices-Silicon RF Devices RF High Power MOS FETs (Discrete) RD45HMF1

MITSUBISHI

三菱电机

RoHS Compliance, Silicon MOSFET Power Transistor 900MHz,45W

文件：381.66 Kbytes 页数：7 Pages

Mitsubishi

三菱电机