丝印：RD3P03BBH；Package：TO-252；Nch 100V 35A Power MOSFET

Features 1) Low on - resistance 2) High Power Package(TO-252) 3) Pb-free plating ; RoHS compliant 4) Halogen free Application Switching

文件：2.78189 Mbytes 页数：13 Pages

ROHM

罗姆

丝印：RD3P03BBH；Package：TO-252；Nch 100V 35A Power MOSFET

Features 1) Low on - resistance 2) High Power Package(TO-252) 3) Pb-free plating ; RoHS compliant 4) Halogen free Application Switching

文件：2.78189 Mbytes 页数：13 Pages

ROHM

罗姆

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·100 Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed sw

文件：366.57 Kbytes 页数：2 Pages

ISC

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