Diffused Junction Silicon Diode Low VF - High-Speed Switching Diode

Features • High breakdown voltage (VRRM=300V). • High reliability. • Fast forward / reverse recovery time. • Low noise at the time of reverse recovery. • Attachment workability is good by Mica-less package.

文件：192.03 Kbytes 页数：3 Pages

SANYO

三洋

Diffused Junction Silicon Diode Low VF - High-Speed Switching Diode

ONSEMI

安森美半导体

Ultrahigh-Speed Switching Diode

Features •VF=1.3V max. (IF=20A) •VRRM=300V •trr=20ns (typ.)

文件：197.1 Kbytes 页数：3 Pages

SANYO

三洋

SAW Filter

文件：248.51 Kbytes 页数：5 Pages

REYCONNS

来亿中国

N and P-Channel Enhancement Mode Power MOSFET

General Features N-Channel VDS = 20V,ID =3A RDS(ON)

文件：437.1 Kbytes 页数：11 Pages

RECTRON

丽正国际