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RJK6002DJE

600V-2A-MOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=5.7Ωtyp.(atID=1A,VGS=10V,Ta=25°C) •Lowleakagecurrent •Highspeedswitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RJK6002DPD

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

RJK6002DPD

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance •Lowleakagecurrent •Highspeedswitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RJK6002DPD

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

RJK6002DPE

600V-2A-MOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=5.7Ωtyp.(atID=1A,VGS=10V,Ta=25°C) •Lowdrivecurrent •Highdensitymounting

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RN6002

MotorDriveCircuitApplications/PowerAmplifierApplications/PowerSwitchingApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

S6002CS

EVSeries2ASensitiveSCRs

Littelfuselittelfuse

力特力特公司

S6002CSRP

EVSeries2ASensitiveSCRs

Littelfuselittelfuse

力特力特公司

S6002ES

EVSeries2ASensitiveSCRs

Littelfuselittelfuse

力特力特公司

S6002ESAP

EVSeries2ASensitiveSCRs

Littelfuselittelfuse

力特力特公司

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