丝印：RCR2822；Package：SOT-153；PFM Step-Up DC/DC Converter

文件：489.44 Kbytes 页数：3 Pages

KEXIN

科信电子

On-site wireless telephony on your IP Network

文件：394.26 Kbytes 页数：4 Pages

NEC

瑞萨

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V dri

文件：67.22 Kbytes 页数：6 Pages

SANYO

三洋

DUAL POWER AMPLIFIER

GENERAL DESCRIPTION The SJ2822M is a monolithic integrated circuit in 8 lead Minidip package. It is intended for use as dual audio power amplifier in portable cassette tape players and radios. l FEATURES l Dual Low-voltage power amplifier l Supply voltage down to 1.8V l Low crossover dis

文件：181.18 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商