On-site wireless telephony on your IP Network

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NEC

瑞萨

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V dri

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SANYO

三洋

DUAL POWER AMPLIFIER

GENERAL DESCRIPTION The SJ2822M is a monolithic integrated circuit in 8 lead Minidip package. It is intended for use as dual audio power amplifier in portable cassette tape players and radios. l FEATURES l Dual Low-voltage power amplifier l Supply voltage down to 1.8V l Low crossover dis

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ETCList of Unclassifed Manufacturers

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SP2822

文件：280.13 Kbytes 页数：5 Pages

ETC1List of Unclassifed Manufacturers

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