首页 >RCJ100N25TL>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PolarHTHiPerFETPowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=27mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Ap | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Low HiPerFETPowerMOSFETs SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackage •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwi | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsISOPLUS247 HiPerFET™PowerMOSFETsISOPLUS247™(ElectricallyIsolatedBackside) N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowd | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=27mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=25.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=37mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Ap | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHTPowerMOSFETN-ChannelEnhancementMode PolarHT™PowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelPowerMOSFET DESCRIPTION ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=50mΩ（max）@VGS=10V ·UnclampedInductiveSwitching APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHTPowerMOSFETN-ChannelEnhancementMode PolarHT™PowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHTPowerMOSFETN-ChannelEnhancementMode PolarHT™PowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Nch250V10APowerMOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
SILICONN-CHANNELMOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Rohm |
20+ |
N/A |
957 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
ROHM |
1809+ |
TO-263 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Rohm Semiconductor |
21+ |
5-TSSOP,SC-70-5,SOT-353 |
6000 |
专业分立半导体,原装渠道正品现货 |
询价 | ||
Rohm Semiconductor |
22+ |
SC83 |
9000 |
原厂渠道,现货配单 |
询价 | ||
Rohm Semiconductor |
2022+ |
TO-263-3,D2Pak(2 引线 + 接片 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ROHM(罗姆) |
23+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
ROHM-罗姆 |
24+25+/26+27+ |
LPTS |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
Rohm Semiconductor |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
询价 | ||
ROHM(罗姆) |
23+ |
6000 |
询价 | ||||
TE/泰科 |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
询价 |
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