Chip Resistor Surface Mount

FEATURES  Total lead free without RoHS exemption  Halogen Free Epoxy  Reducing environmentally hazardous wastes  High component and equipment reliability  Saving of PCB space APPLICATIONS  All general purpose application

文件：546.53 Kbytes 页数：10 Pages

YAGEO

国巨

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ09312B is a 2-- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or r

文件：1.35533 Mbytes 页数：28 Pages

恩XP

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA25312B is a 2-stage high efficiency InGaP HBT driver amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks. It is suitable f

文件：342.39 Kbytes 页数：10 Pages

恩XP

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides excep

文件：640.44 Kbytes 页数：19 Pages

恩XP

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA25312B is a high efficiency InGaP HBT amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks. It is suitable for applications

文件：899.04 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

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Chip Resistor Surface Mount

FEATURES  Total lead free without RoHS exemption  Halogen Free Epoxy  Reducing environmentally hazardous wastes  High component and equipment reliability  Saving of PCB space APPLICATIONS  All general purpose application

文件：546.53 Kbytes 页数：10 Pages

YAGEO

国巨

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides excep

文件：640.44 Kbytes 页数：19 Pages

恩XP

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA25312B is a 2-stage high efficiency InGaP HBT driver amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks. It is suitable f

文件：342.39 Kbytes 页数：10 Pages

恩XP

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ09312B is a 2-- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or r

文件：1.35533 Mbytes 页数：28 Pages

恩XP

Chip Resistor Surface Mount

FEATURES  Total lead free without RoHS exemption  Halogen Free Epoxy  Reducing environmentally hazardous wastes  High component and equipment reliability  Saving of PCB space APPLICATIONS  All general purpose application

文件：546.53 Kbytes 页数：10 Pages

YAGEO

国巨