IGBT 1250V 40A TO-247A Built-In FRD

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website. • Trench gate and thin wafer technology (G8H series)\n• Built in fast recovery diode in one package\n• Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)\n• Quality grade: Standard\n• High-Speed switching\n• Short circuit withstands time (10 µs mi;

Renesas

瑞萨

1250V - 40A - IGBT

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RENESAS

瑞萨

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：ABU / IGBT

Renesas Electronics America Inc

SMD

Mini-circuits

上传：深圳市益中天科技发展有限公司

SMD

Mini-circuits

上传：深圳市益中天科技发展有限公司