Gate Driver IC for IGBTs and SiC MOSFETs

1. Description The RAJ2930004AGM is a gate driver IC for IGBT and SiC MOSFET gate-drive in high voltage inverter applications. Integrated 3750Vrms micro-isolators provide data transfer with high voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side). In a

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Gate Driver IC for IGBTs and SiC MOSFETs

- On-chip Micro Isolator (isolated circuit) ➢ High voltage isolation: 3750Vrms, 1min ➢ High CMTI (Common Mode Transient Immunity): over 150V/ns - High output gate drive circuit ➢ Gate drive output peak current (Source / Sink): 10A typ. / 10A typ. ➢ On-chip active miller clamp ➢ Soft turn-off

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Gate Driver IC for IGBTs and SiC MOSFETs

- On-chip Micro Isolator (isolated circuit) ➢ High voltage isolation: 3750Vrms, 1min ➢ High CMTI (Common Mode Transient Immunity): over 150V/ns - High output gate drive circuit ➢ Gate drive output peak current (Source / Sink): 10A typ. / 10A typ. ➢ On-chip active miller clamp ➢ Soft turn-off

文件：2.40674 Mbytes 页数：38 Pages

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Gate Driver for HEV/EV

The RAJ2930004AGM is a gate driver IC for IGBT and SiC MOSFET gate-drive in high voltage inverter applications. Integrated 3750Vrms micro-isolators provide data transfer with high voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side). In addition, it boasts s • Isolation capabilities• Withstand Isolation voltage: 3.75kVrms\n• CMTI (Common Mode Transient Immunity): 150V/ns;

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