Low-Side GAN FET Driver with Programmable Source Current and Adjustable Overcurrent Protection

Features • Wide operating voltage range of 6.5V to 18V • Up to 18V logic inputs (regardless of VDD level) ○ Inverting and non-inverting inputs • Optimized to drive enhancement mode GaN FETs ○ Internal 5.8V regulated gate drive voltage ○ Independent outputs for adjustable turn-on/turn-off sp

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Low-Side GAN FET Driver with Programmable Source Current and Adjustable Overcurrent Protection

The RAA226110 is a low-side driver designed to drive enhancement-mode Gallium Nitride (GaN) FETs in isolated and non-isolated topologies. The RAA226110 operates with a supply voltage from 6.5V to 18V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and • Wide operating voltage range of 6.5V to 18V\n• Up to 18V logic inputs (regardless of VDD level)• Inverting and non-inverting inputs;

Renesas

瑞萨

Package：16-VQFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：LOW SIDE GAN DRIVER, 4X4 QFN, BU

Renesas Electronics America Inc

Package：16-VQFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：LOW SIDE GAN DRIVER, 4X4 QFN, T\u0026

Renesas Electronics America Inc

Package：16-VQFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：LOW SIDE GAN DRIVER, 4X4 QFN, T\u0026

Renesas Electronics America Inc