S9013-I

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

S9013-I

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

S9013-J

NPNTransistors

Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A

S9013-L

NPNTransistors

Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A

S9013M

TRANSISTOR

FEATURES HighCollectorCurrent.(IC=500mA) ComplementarytoS9012M ExcellenthFElinearity. APPLICATION 150mWOutputAmplifierofPotableRadiosinClassBPush-pullOperation. Forportableequipment:(i.e.Mobilephone,MP3,MD,CD-ROM,DVD-ROM,NotebookPC,etc.)

S9013R

Plastic-EncapsulateTransistors

FEATURES ComplementarytoS9012 ExcellenthFElinearity

S9013T

NPNEpitaxialSiliconTransistor

FEATURE Powerdissipation PCM:0.625WTamb=25°C Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55to+150°C

S9013-TA

Plastic-EncapsulateTransistors

S9013W

0.5A,40VNPNPlasticEncapsulatedTransistor

FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity

S9013W

TRANSISTOR(NPN)

FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity