首页 >R519R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-andP-Channel20-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFETs •NewThermallyEnhancedPowerPAK® SC-70Package -SmallFootprintArea -LowOn-Resistance •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitchforPortableDevices | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | TUOFENG | ||
N-andP-Channel20-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFETs •TypicalESDProtection:N-Channel2000V P-Channel1000V •100RgTested •Materialcategorization: Fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-andP-Channel20-V(D-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR *500Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
EpitaxialplanarNPNsilicontransistor Description •Dualchipdigitaltransistor Features •TwoSRC1207chipsinSOT-363package •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
EpitaxialplanarNPNsilicontransistor Description •Dualchipdigitaltransistor Features •TwoSRC1207chipsinSOT-363package •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess | AUK AUK corp | AUK | ||
6GHzand8.5GHzvectornetworkanalyzers | PICO Pico Technology Ltd. | PICO | ||
TemperatureCompensatedCrystalOscillator | VANLONGVanlong Technology Co., Ltd. 万隆科技万隆科技股份有限公司 | VANLONG |
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