丝印：R4；Package：SOT23；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：324 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：R4；Package：TO-236AB；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX84-A), ±2 (BZX84-B) and approximately ±5 (BZX84-C) tolerance range. The series includes 37 breakdown volt

文件：323.9 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：R4；Package：SOT323；Voltage regulator diodes

1. General description General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Wide working voltage range: nominal 2.4 V to 75 V (E24 range) • Two tolerance series: ± 2 and ± 5 3. Applications • Gene

文件：264.75 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：R4；Package：SC-70；Voltage regulator diodes

1. General description General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Wide working voltage range: nominal 2.4 V to 75 V (E24 range) • Two tolerance series: ± 2 and ± 5 • Qualified according to

文件：233.91 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：R4；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mA Dual LDO with Low Noise, High PSRR, and Low IQ ISL9016 is a high performance dual LDO capable of providing up to 150mA current on each channel. It features a low standby current and very high PSRR and is stable with output capacitance of 1µF to 4.7µF with an ESR of up to 200mΩ. Features •

文件：558.84 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：R4；Package：SOD-123；SOD-123 Plastic-Encapsulate Diodes

Features Lead Free Finish/RoHS Compliant Extremely Low Thermal Resistance For Surface Mount Application and High Current Capability

文件：2.2008 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：R4；Package：79A；SILICON POWER MOS FET

3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi

文件：285.57 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：R4；Package：SC-74；40 V PNP BISS loadswitch

Features * Low VCEsat (BISS) and resistor-equipped transistor in one package * Low threshold voltage (

文件：271.23 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：R4；Package：SC-88A；PNP/PNP matched double transistors

Features * Current gain matching * Base-emitter voltage matching * Common emitter configuration for SOT353 types * Application-optimized pinout

文件：118.85 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：R4；Package：DFN1006BD-2；Zener voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：296.87 Kbytes 页数：13 Pages

NEXPERIA

安世