声表面波谐振器

ZXSF

中讯四方

Silicon Power Rectifier

• Glass Passivated Die • 1200 Amps Surge Rating • Glass to metal seal construction • VRRM to 1200V

文件：119.37 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Silicon Power Rectifier

• Glass Passivated Die • 1200 Amps Surge Rating • Glass to metal seal construction • VRRM to 1200V

文件：119.37 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Silicon Power Rectifier

• Glass Passivated Die • 1200 Amps Surge Rating • Glass to metal seal construction • VRRM to 1200V

文件：119.37 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Silicon Power Rectifier

• Glass Passivated Die • 1200 Amps Surge Rating • Glass to metal seal construction • VRRM to 1200V

文件：119.37 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Silicon Power Rectifier

• Glass Passivated Die • 1200 Amps Surge Rating • Glass to metal seal construction • VRRM to 1200V

文件：119.37 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Silicon Power Rectifier

• Glass Passivated Die • 1200 Amps Surge Rating • Glass to metal seal construction • VRRM to 1200V

文件：119.37 Kbytes 页数：2 Pages

MICROSEMI

美高森美

30.0 Ampere SwitchMode Single Fast Recovery Epitaxial Diode

文件：1.48484 Mbytes 页数：3 Pages

THINKISEMI

思祁半导体

丝印：R3060G2；Package：TO-247；STEALTH Rectifier 30 A, 600 V

Description The ISL9R3060G2−F085 is STEALTH diode optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. This device is intended for us

文件：383.14 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Diode and Rectifier Devices

70A,200V-1200V rectifier in DO5 package.

Microchip

微芯科技