PMV19XNEA

Marking：R3；Package：TO-236AB；30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •ExtendedtemperaturerangeTj=175°C •TrenchMOSFET

PZU884LS-B6V8-Q

Marking：R3；Package：DFN1006BD-2；Zener voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

TLV77410PDQNR

Marking：R3；Package：X2SON；TLV774 300mA, Small-Size, High-PSRR, Low-Dropout Regulator With Enable

1Features •HighPSRR:60dB(1kHz),45dB(1MHz) •VINrange:1.4Vto5.5V •Fixedoutputvoltagerange:0.6Vto3.3V •Outputvoltageaccuracy:2% •Lowdropoutvoltage: –310mVmaxat300mA(1.2VOUT)over temperature •Foldbackcurrentlimit •Activeoutputpulldownresistor •Pack

AR3311D3

Marking：R3；Package：SOD-323；1-Line Low Capacitance Bi-directional TVS Diode

CES388

Marking：R3；Package：ESC；Schottky Barrier Diode Silicon Epitaxial

FP6802-39CC8G

Marking：R3；Package：SC-82；High-Precision Voltage Detector with Ultra-Low Quiescent Current

LC03CFN

Marking：R3；Package：DFN1410P2；LOW CAPACITANCE TVS DIODE ARRAY

ULC33CFN

Marking：R3；Package：DFN1410P2；LOW CAPACITANCE TVS DIODE ARRAY

744040420033

Marking：R33；WE-LQS SMT Semi-Shielded Power Inductor

GeneralInformation: AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

744383560033

Marking：R33；WE-MAPI SMT Power Inductor

GeneralProperties: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)