R2A30445NP中文资料瑞萨数据手册PDF规格书

特性 Features

 An ultra-fine CMOS process has been adopted for low power consumption

in a design.

 5.0mmx5.0mm QFN (0.5mm pitch)

 Built-in of 2CH H-bridge (with a FS/BTL selectable function).

 BTL has a selectable built-in DAC control capable of 10bit accuracy.

 Hall device drive, built-in Hall output computation circuit.

 8bitDAC built-in for various offset adjustments.

 Selection of 2 line serial communication (I2C) and 3 line serial

communication (SPI) is possible.

 For I2C, the input interface control voltage is compatible with 1.8V system.

 Built-in power-on reset circuit, reference voltage, prevention from lowvoltage malfunction and thermal shutdown circuit.