R2A30406NP中文资料瑞萨数据手册PDF规格书

特性 Features

 All bridges can be controlled independently.

An ultra-fine CMOS process has been adopted for low power

consumption in a design with no charge-pump.

 Built-in H bridge of a full-swing drive 4 circuit

 Built-in low-voltage malfunction prevention circuit

 Power supply systems are all internally isolated and include

a function to prevent reverse current between power supplies.

 It is housed in a small package (24 PCSP 3.5x3.5 mm t=0.8mm