1 Watt SIP 7 Single & Dual Output

文件：106.91 Kbytes 页数：3 Pages

RECOM

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

文件：106.94 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：106.3 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -150V, -12A, RDS(ON) = 0.24W @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：677.61 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -150V, -12A, RDS(ON) = 0.24Ω @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

文件：379.06 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -150V, -12A, RDS(ON) = 0.24W @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：677.61 Kbytes 页数：4 Pages

CET-MOS

华瑞