丝印：R12；WE-HCMD SMT High Current Flat Wire Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：674.92 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R12；WE-HCMD SMT High Current Flat Wire Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：675.07 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R12；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：492.92 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R12；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：491.8 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R12；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：487.28 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R12；Package：SC70(DCK)；REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

文件：1.27003 Mbytes 页数：39 Pages

TI

德州仪器

丝印：R12；Package：SC70(DCK)；REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

文件：1.27003 Mbytes 页数：39 Pages

TI

德州仪器

丝印：R12；Package：SC70(DCK)；REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

文件：1.27003 Mbytes 页数：39 Pages

TI

德州仪器

丝印：R12；Package：SC70(DCK)；REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

文件：1.27003 Mbytes 页数：39 Pages

TI

德州仪器

丝印：R12；Package：SC70(DCK)；REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

文件：1.27003 Mbytes 页数：39 Pages

TI

德州仪器