首页 >QSC6075>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelAdvancedPowerMOSFET | RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司 | RUICHIPS | ||
Ballguidepreventsovercompressionofelastomer | IRONWOOD Ironwood Electronics. | IRONWOOD | ||
SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
NPNSiliconTransistor | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
NPNSiliconTransistor Descriptions •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage :VCEO=90V •Lowcollectorsaturationvoltage :VCE(sat)=0.5V(MAX.) | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR VBR:6.8-440Volts PPK:600Watts FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTSILICONZENERDIODES | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTSILICONZENERDIODES VZ:3.3-200Volts PD:5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree | EIC EIC discrete Semiconductors | EIC |
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