NPN Silicon Transistor

Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCEO = 90V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.)

文件：434.11 Kbytes 页数：6 Pages

KODENSHI

可天士

NPN Silicon Transistor

文件：434.11 Kbytes 页数：6 Pages

KODENSHI

可天士

Power Transistors

Kodenshi-AUK

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

文件：61.72 Kbytes 页数：4 Pages

EIC

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free

文件：28.4 Kbytes 页数：4 Pages

EIC

SURFACE MOUNT SILICON ZENER DIODES

文件：57.49 Kbytes 页数：2 Pages

EIC