QPD1022中文资料DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor数据手册Qorvo规格书

描述 Description

The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.Lead-free and ROHS compliant.  Evaluation boards are available upon request.

特性 Features

• Frequency Range: DC - 12 GHz
• Output Power (P3dB): 11.0 W at 2 GHz
• Linear Gain: 24.0 dB typical at 2 GHz
• Typical PAE3dB: 68.8 % at 2 GHz
• Operating voltage: 32V
• Low thermal resistance package
• CW and Pulse capable
• 3 x 3 mm package

应用 Application

• Military Radar
• Commercial Radar
• Land Mobile and Military Radio Communications
• Active Antennas
• Base Stations
• Jammers