SP6T Switch For LTE Applications

Feature Overview • Qualified to AEC-Q100 Grade 3 • Excellent insertion loss and isolation performance o 0.33dB Typ IL, Band 5 o 45dB Typ Isolation, Band 5 • Multi-Band operation from 617MHz to 6000MHz • RFFE 2.0 compatible • DC blocking capacitors are not required in typical applications

文件：1.10534 Mbytes 页数：19 Pages

QORVO

威讯联合

6 - 18 GHz Power Amplifier

Description The TriQuint TGA8014-SCC is a two-stage GaAs monolithic medium power amplifier. Reactively matched 914 um and 1219 um FETS provide 11 dB nominal gain with 16 percent typical power-added efficiency and output power at 1 dB gain compression of 0.5 watt. Ground is provided to the circuit

文件：532.06 Kbytes 页数：6 Pages

TRIQUINT

6 - 18 GHz Power Amplifier

Description The TriQuint TGA8014-SCC is a two-stage GaAs monolithic medium power amplifier. Reactively matched 914 um and 1219 um FETS provide 11 dB nominal gain with 16 percent typical power-added efficiency and output power at 1 dB gain compression of 0.5 watt. Ground is provided to the circuit

文件：532.06 Kbytes 页数：6 Pages

TRIQUINT

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

文件：213.73 Kbytes 页数：7 Pages

TOSHIBA

东芝