75 W, 48 V, DC to 3.6 GHz, GaN RF Power Transistor

Key Features Operating Frequency Range: DC to 3.6 GHz Operating Drain Voltage: +48 V Maximum Output Power (PSAT): 79.4 W (1) Maximum Drain Efficiency: 77.9 (1) Efficiency-Tuned P3dB Gain: 19.4 dB (1) Surface Mount Plastic Package

文件：916.18 Kbytes 页数：12 Pages

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75 W, DC to 3.6 GHz 48V GaN RF Power Transistor

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TRIQUINT

DC - 3.6 GHz, 75 Watt, 48 V GaN RF Power Transistor

Qorvo's QPD0050 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor.\nThe QPD0050 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. Th • Frequency range: DC to 3.6 GHz\n• Drain voltage: 48V\n• Maximum output power (P3dB): 82W @ 2.6GHz\n• Maximum drain efficiency: 78.5% @ 2.6GHz\n• Efficiency-Tuned P3dB gain: 19.4dB @ 2.6GHz\n• 7.2 x 6.6 mm DFN;

Qorvo

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75 W, 48 V, DC to 3.6 GHz, GaN RF Power Transistor

Key Features Operating Frequency Range: DC to 3.6 GHz Operating Drain Voltage: +48 V Maximum Output Power (PSAT): 79.4 W (1) Maximum Drain Efficiency: 77.9 (1) Efficiency-Tuned P3dB Gain: 19.4 dB (1) Surface Mount Plastic Package

文件：916.18 Kbytes 页数：12 Pages

QORVO

威讯联合

75 W, 48 V, DC to 3.6 GHz, GaN RF Power Transistor

Key Features Operating Frequency Range: DC to 3.6 GHz Operating Drain Voltage: +48 V Maximum Output Power (PSAT): 79.4 W (1) Maximum Drain Efficiency: 77.9 (1) Efficiency-Tuned P3dB Gain: 19.4 dB (1) Surface Mount Plastic Package

文件：916.18 Kbytes 页数：12 Pages

QORVO

威讯联合

75 W, 48 V, DC to 3.6 GHz, GaN RF Power Transistor

Key Features Operating Frequency Range: DC to 3.6 GHz Operating Drain Voltage: +48 V Maximum Output Power (PSAT): 79.4 W (1) Maximum Drain Efficiency: 77.9 (1) Efficiency-Tuned P3dB Gain: 19.4 dB (1) Surface Mount Plastic Package

文件：916.18 Kbytes 页数：12 Pages

QORVO

威讯联合