125W, 50V, DC ??3.2 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.2 GHz Output Power (P3dB)1: 162 W Linear Gain1: 17.5 dB Typical DEFF3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

文件：1.36734 Mbytes 页数：20 Pages

QORVO

威讯联合

125W, 50V, DC ??3.2 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.2 GHz Output Power (P3dB)1: 162 W Linear Gain1: 17.5 dB Typical DEFF3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

文件：1.36734 Mbytes 页数：20 Pages

QORVO

威讯联合

125W, 50V, DC ??3.2 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.2 GHz Output Power (P3dB)1: 162 W Linear Gain1: 17.5 dB Typical DEFF3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

文件：1.36734 Mbytes 页数：20 Pages

QORVO

威讯联合

SILICON BRIDGE RECTIFIERS

文件：19.79 Kbytes 页数：2 Pages

EIC

SILICON BRIDGE RECTIFIERS

PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VDC * Ideal for printed circuit board * Very good heat dissipation * Pb

文件：39.69 Kbytes 页数：2 Pages

SYNSEMI

SILICON BRIDGE RECTIFIERS

文件：47.58 Kbytes 页数：2 Pages

EIC