125W, 50V, DC ??3.2 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.2 GHz Output Power (P3dB)1: 162 W Linear Gain1: 17.5 dB Typical DEFF3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

文件：1.36734 Mbytes 页数：20 Pages

QORVO

威讯联合

125W, 50V, DC ??3.2 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.2 GHz Output Power (P3dB)1: 162 W Linear Gain1: 17.5 dB Typical DEFF3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

文件：1.36734 Mbytes 页数：20 Pages

QORVO

威讯联合

125W, 50V, DC ??3.2 GHz, GaN RF Transistor

Product Features Frequency: DC to 3.2 GHz Output Power (P3dB)1: 162 W Linear Gain1: 17.5 dB Typical DEFF3dB 1: 74 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable Note: 1 @ 2 GHz

文件：1.36734 Mbytes 页数：20 Pages

QORVO

威讯联合

DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor

Qorvo's QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avioni • Frequency range: DC - 3.2GHz\n• Linear gain: > 17 dB typical at 2 GHz\n• Operating voltage: 50V\n• Low thermal resistance package\n;

Qorvo

威讯联合