QPA2966DEVB

2 – 20 GHz 20 Watt GaN Amplifier

KeyFeatures •FrequencyRange:2–20GHz •PSAT(PIN=31dBm):44dBm •PAE(PIN=31dBm):25% •PowerGain(PIN=31dBm):13dB •SmallSignalGain:19dB •Bias:VD=22V,IDQ=3360mA •DieDimensions:3.69x6.99x0.10mm

QPA2966EVB

2–18GHz20WattGaNAmplifier

KeyFeatures •FrequencyRange:2–18GHz •PSAT(PIN=31dBm):43dBm •PAE(PIN=31dBm):20% •PowerGain(PIN=31dBm):12dB •SmallSignalGain:19dB •Bias:CW,VD=22V,IDQ=3360mA •PackageDimensions:0.6x0.6x0.205in ,Applications •CommunicationSystems •

RN2966

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications

RN2966CT

SwitchingApplicationsInverterCircuitApplicationsInterfaceCircuitApplicationsDriverCircuitApplications

RN2966FE

SiliconPNPEpitaxialType(PCTProcess)(BiasResistorBuilt-inTransistor)

Switching,InverterCircuit,InterfaceCircuitand DriverCircuitApplications •TwodevicesareincorporatedintoanExtreme-Super-Mini(6-pin) package. •Incorporatingabiasresistorintoatransistorreducespartscount. Reducingthepartscountenablesthemanufactureofevermore

RN2966FS

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications

S2966

18watt;pin-basedCompactFluorescent;4100K;82CRI;2G11base

TZ2966C

CrystalUnitSMD2.0x1.620.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage MoistureSensitivityLevel(MSL):Level-1 DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystalunitforuseinwireless