2 – 20 GHz 20 Watt GaN Amplifier

Key Features • Frequency Range: 2 – 20 GHz • PSAT (PIN = 31 dBm): 44 dBm • PAE (PIN = 31 dBm): 25 % • Power Gain (PIN = 31 dBm): 13 dB • Small Signal Gain: 19 dB • Bias: VD = 22 V, IDQ = 3360 mA • Die Dimensions: 3.69 x 6.99 x 0.10 mm

文件：660.36 Kbytes 页数：27 Pages

QORVO

威讯联合

2 – 18 GHz 20 Watt GaN Amplifier

Key Features • Frequency Range: 2 – 18 GHz • PSAT (PIN = 31 dBm): 43 dBm • PAE (PIN = 31 dBm): 20 % • Power Gain (PIN = 31 dBm): 12 dB • Small Signal Gain: 19 dB • Bias: CW, VD = 22 V, IDQ = 3360 mA • Package Dimensions: 0.6 x 0.6 x 0.205 in ,Applications • Communication Systems •

文件：2.082659 Mbytes 页数：26 Pages

QORVO

威讯联合

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：271.14 Kbytes 页数：7 Pages

TOSHIBA

东芝

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

文件：219.26 Kbytes 页数：8 Pages

TOSHIBA

东芝