37.5 – 42.5 GHz 10 Watt GaN Power Amplifier

Key Features • Frequency Range: 37.5 – 42.5 GHz • PSAT (PIN = 29 dBm): 40 dBm • PAE (PIN = 29 dBm): 17% • IM3 (POUT/Tone = 34 dBm): -25 dBc • Small Signal Gain: 16 dB • Bias: VD = 24 V, IDQ = 280 mA, VG = -2.3 V typ. range • Die Dimensions: 4.2 x 5.0 x 0.05 mm Applications • Satelli

文件：1.45614 Mbytes 页数：31 Pages

QORVO

威讯联合

37.5 – 42.5 GHz 10 Watt GaN Power Amplifier

Key Features • Frequency Range: 37.5 – 42.5 GHz • PSAT (PIN = 29 dBm): 40 dBm • PAE (PIN = 29 dBm): 17% • IM3 (POUT/Tone = 34 dBm): -25 dBc • Small Signal Gain: 16 dB • Bias: VD = 24 V, IDQ = 280 mA, VG = -2.3 V typ. range • Die Dimensions: 4.2 x 5.0 x 0.05 mm Applications • Satelli

文件：1.45614 Mbytes 页数：31 Pages

QORVO

威讯联合

37.5 - 42.5 GHz 10 Watt GaN Amplifier

Qorvo's QPA4246D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15).  It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band.  QPA4246D achieves 5 W linear power with 25 dBc third order intermodulation distortion products, and 16 dB small signal gain.  • Frequency Range: 37.5 -  42.5 GHz\n• PSAT (PIN = 29 dBm): 40 dBm\n• PAE( PIN = 29 dBm): 17%\n• IMD3 (POUT/TONE = 34 dBm): -25 dBc\n• Small Signal Gain: 16 dB\n• Bias: VD = 24 V, IDQ = 280 mA, VG = -2.3 V typical range\n• Dimensions: 4.2 x 5.0 x 0.05 mm;

Qorvo

威讯联合

IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung

文件：197.05 Kbytes 页数：9 Pages

OSRAM

艾迈斯欧司朗

IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung

文件：197.05 Kbytes 页数：9 Pages

OSRAM

艾迈斯欧司朗

TOPLED® Reverse Gullwing Lens Infrared Emitter (940 nm) - 24 °

Features: Corrosion Robustness Class: 3B Qualifications: The product qualification test plan is based on the guidelines of AEC-Q102, failure mechanism based Stress Test Qualification for Discrete Optoelectronic Semiconductors in Automotive applications. ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-00

文件：1.05796 Mbytes 页数：17 Pages

AMSCO

艾迈斯欧司朗