2 – 18 GHz 20 Watt GaN Amplifier

Key Features • Frequency Range: 2 – 18 GHz • PSAT (PIN = 31 dBm): 43 dBm • PAE (PIN = 31 dBm): 20 % • Power Gain (PIN = 31 dBm): 12 dB • Small Signal Gain: 19 dB • Bias: CW, VD = 22 V, IDQ = 3360 mA • Package Dimensions: 0.6 x 0.6 x 0.205 in ,Applications • Communication Systems •

文件：2.082659 Mbytes 页数：26 Pages

QORVO

威讯联合

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：271.14 Kbytes 页数：7 Pages

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Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

文件：219.26 Kbytes 页数：8 Pages

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Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more

文件：558.9 Kbytes 页数：8 Pages

TOSHIBA

东芝