13.75 – 14.5 GHz 55 Watt GaN Power Amplifier

Key Features • Frequency Range: 13.75 – 14.5 GHz • Extended Frequency Range: 12.75 – 15.35 GHz • PSAT (PIN = 25 dBm): 47.5 dBm • PAE (PIN = 25 dBm): 37 % • IM3 (POUT/Tone = 40 dBm): -25 dBc • Small Signal Gain: 29 dB • Bias: VD = +24 V, ID12 = 168 mA, ID3 = 512 mA, VG = -2.3 V +/- rang

文件：1.84059 Mbytes 页数：32 Pages

QORVO

威讯联合

13.75 - 14.5 GHz 55 Watt GaN Power Amplifier

Qorvo's QPA1314T is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15), mounted to a high thermal conductivity tab.  Operating between 13.75 and 14.5 GHz, it achieves 55 W saturated output power.  Operating frequency extends to 12.75 – 15.35 GHz.To simpl • Frequency Range: 13.75 - 14.5 GHz\n• PSAT: 47.5 dBm;

Qorvo

威讯联合

Ratchet Ring Spanners

Ratcheting ring spanners are designed for use in areas where access is restricted. The ratchet is reversed simply by turning the wrench over. The bi-hexagon ring form is broached for accuracy to ensure a perfect non slip fit. The wrench body is nickel and chrome plated to prevent corrosion an

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BRITOOL

Through-Hole Power Inductor

文件：86.28 Kbytes 页数：1 Pages

Bourns

伯恩斯

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Complementary to RN2314~RN2318

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TOSHIBA

东芝