1.0 – 6.0 GHz 18 W GaN Power Amplifier

Key Features • Frequency Range: 1 – 6 GHz • PSAT : 42.7 dBm (PIN = 19 dBm) • PAE: > 40 (PIN = 19 dBm) • Power Gain: 24 dB (PIN = 19 dBm) • Small Signal Gain: > 31 dB • Bias: VD = 22 V, IDQ = 1022 mA • Package Dimensions: 7.00 x 7.00 x 0.85 mm Performance is typical across frequency. Please

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QORVO

威讯联合

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ■ Low threshold — 2.0V max. ■ High input impedance ■ Low input capacitance — 50pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices

文件：27.58 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：476.38 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：46.74 Kbytes 页数：4 Pages

SUTEX