N-Channel 60V Fast Switching MOSFET

The QM6004D is a high performance trench N-channel MOSFET which utilizesextremely high cell density to provide low Rdson and gate charge characteristics.It is ideally suited to support synchronous buck converter applications.\n\n The QM6004D meets RoHS and Green Product requirements while supp • Advanced high cell density Trench technology\n• Super Low Gate Charge\n• Excellent CdV/dt effect decline\n• Green Device Available;

uPI(UBIQ)

力智电子

N-Channel MOSFET uses advanced trench technology

文件：1.10198 Mbytes 页数：3 Pages

DOINGTER

杜因特

10V Drive Nch MOSFET

文件：1.16378 Mbytes 页数：6 Pages

ROHM

罗姆

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：299.19 Kbytes 页数：2 Pages

ISC

无锡固电