P-Channel 60-V (D-S) MOSFET

FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available

文件：1.11307 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

文件：502.56 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

文件：502.69 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

HIGH POWER SWITCHING USE NON-INSULATED TYPE

HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current ........................ 600A • VCEX Collector-emitter voltage ........... 350V • hFE DC current gain............................. 500 • Non-Insulated Type APPLICATION Robotics, Forklifts, Welders

文件：59.92 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

Dual N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • CCFL Inverter • DC/DC Converter • HDD

文件：518.679 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Fits 7/8 (22mm) diameter holes

文件：326.26 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel 60 V (D-S) MOSFET

文件：910.66 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件：1.10198 Mbytes 页数：3 Pages

DOINGTER

杜因特

N-Channel MOSFET uses advanced trench technology

文件：887.25 Kbytes 页数：4 Pages

DOINGTER

杜因特

N-Ch 60V Fast Switching MOSFETs

文件：237.31 Kbytes 页数：4 Pages

UPI

力智电子