N-Channel 20V Fast Switching MOSFET

The QM2710D is a high performance trench N-channel MOSFET which utilizesextremely high cell density to provide low Rdson and gate charge characteristics.It is ideally suited to support most of the small power switching and load switchapplications.\n\n The QM2710D meets RoHS and Green Product r • Advanced high cell density Trench technology , Super Low Gate Charge\n• Excellent CdV/dt effect decline\n• Green Device Available;

uPI(UBIQ)

力智电子

N-Channel 20V Fast Switching MOSFET

文件：835.44 Kbytes 页数：8 Pages

UPI

力智电子

High Current FET Driver

文件：72.37 Kbytes 页数：4 Pages

TI

德州仪器

High Current FET Driver

文件：72.37 Kbytes 页数：4 Pages

TI

德州仪器

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellula telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon b

文件：127.71 Kbytes 页数：16 Pages

NEC

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